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| APM4220KA N-Channel Enhancement Mode MOSFET Features * * * * * * 25V/16A, RDS(ON)=7.5m(typ.) @ VGS=10V RDS(ON)=10m(typ.) @ VGS=4.5V Super High Dense Cell Design Avalanche Rated Reliable and Rugged Thermal Pad Exposed with Standard SOP-8 Outline Lead Free Available (RoHS Compliant) Pin Description SOP - 8 Exposed = Thermal Pad (connected to Drain plane for better heat dissipation) ( 5,6,7,8 ) D D DD Applications * Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems (4) G SSS (1, 2, 3) N-Channel MOSFET Ordering and Marking Information APM 4220 Lead Free Code Handling Code Tem p. Range Package Code Package Code KA : SOP-8-P Operating Junction Tem p. Range C : -55 to 150C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : O riginal Device XXXXX - Date Code APM 4220 KA : * * APM 4220 XXXXX Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 1 www.anpec.com.tw APM4220KA Absolute Maximum Ratings Symbol VDSS VGSS TJ TSTG Parameter Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Rating 25 20 150 -55 to 150 50 20 2.5 TA=25C TA=100C TA=25C TA=100C TA=25C TA=100C 50 25 16 8 3 1.2 40 W C/W C/W V C C Unit Common Ratings (TA=25C Unless Otherwise Noted) Mounted on Large Heat Sink PD RJC Maximum Power Dissipation TC=25C TC=100C Thermal Resistance-Junction to Case j Mounted on PCB of 1in2 Pad Area IDP ID PD RJA 300is Pulse Drain Current Tested W A Continuous Drain Current Maximum Power Dissipation A Thermal Resistance-Junction to Ambient k Mounted on PCB of Minimum Footprint IDP ID PD RJA Notes: 300is Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation TA=25C TA=100C TA=25C TA=100C TA=25C TA=100C 50 25 13 6 2.5 1 50 A A W C/W Thermal Resistance-Junction to Minimum Footprint j.The value of RJA is when the device mounted on 1in2 pad with 2oz. Copper, t 10s. k. The value of RJA is when the device mounted on minimum pad with 2oz. Copper, t 10s. Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 2 www.anpec.com.tw APM4220KA Electrical Characteristics Symbol Parameter (TA = 25C unless otherwise noted) Test Condition APM4220KA Min. Typ. Max. Unit Drain-Source Avalanche Ratings EAS Avalanche Energy, Single Pulsed Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS VGS(th) IGSS RDS(ON) VSD a a ID=15A, VDD=15V 25 50 mJ VGS=0V, IDS=250A VDS=20V, VGS=0V VDS=20V, VGS=0V TA=25C VDS=VGS, IDS=250A VGS=20V, VDS=0V VGS=10V, IDS=16A VGS=4.5V, IDS=14A ISD=3A, VGS=0V V 1 30 A V nA m V Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage b 1.3 1.8 7.5 10 0.8 2.5 100 9 12 1.3 Gate Charge Characteristics Qg Total Gate Charge Qgs Qgd Gate-Drain Charge b 20 VDS=10V, VGS=4.5V, IDS=12A 4.8 8.4 26 nC Gate-Source Charge Dynamic Characteristics RG Gate Resistance Ciss Coss Crss td(ON) Tr td(OFF) Tf VGS=0V, VDS=0V, f=1MHz VGS=0V, VDS=15V, Frequency=1.0MHz 2 1785 500 300 10 19 13 95 46 pF Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time VDD=15V, RL=15, IDS=1A, VGEN=10V, RG=6 7 69 32 ns Notes: a: Pulse test ; pulse width 300s, duty cycle 2%. b: Guaranteed by design, not subject to production testing. Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 3 www.anpec.com.tw APM4220KA Typical Characteristics Power Dissipation 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 18 Drain Current 15 Ptot - Power (W) ID - Drain Current (A) 0 20 40 60 80 100 120 140 160 12 9 6 3 0 0 20 40 60 80 100 120 140 160 Tj - Junction Temperature (C) Tj - Junction Temperature (C) Safe Operation Area 100 im it Thermal Transient Impedance Normalized Transient Thermal Resistance 2 1 Duty = 0.5 0.2 0.1 ID - Drain Current (A) 10 Rd s( on )L 300s 1ms 0.1 0.05 0.02 0.01 1 10ms 100ms 1s 0.01 Single Pulse 0.1 DC T =25 C 0.01 A 0.01 0.1 O 1 10 100 1E-3 1E-4 Mounted on 1in pad o RJA : 40 C/W 2 1E-3 0.01 0.1 1 10 30 VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 4 www.anpec.com.tw APM4220KA Typical Characteristics (Cont.) Output Characteristics 50 VGS=4,5,6,7,8,9,10V 40 18 16 Drain-Source On Resistance RDS(ON) - On - Resistance (m) 3V 14 12 10 8 6 4 2 0 VGS=10V ID - Drain Current (A) 30 VGS=4.5V 20 2.5V 10 0 0 2 4 6 8 10 0 10 20 30 40 50 VDS - Drain - Source Voltage (V) ID - Drain Current (A) Transfer Characteristics 50 1.6 Gate Threshold Voltage IDS =250A 1.4 40 Normalized Threshold Voltage 5 ID - Drain Current (A) 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 30 Tj=125 C 20 o 10 Tj=25 C o Tj=-55 C o 0 0 1 2 3 4 0 25 50 75 100 125 150 VGS - Gate - Source Voltage (V) Tj - Junction Temperature (C) Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 5 www.anpec.com.tw APM4220KA Typical Characteristics (Cont.) Drain-Source On Resistance 2.00 VGS = 10V 1.75 IDS = 12A 10 Tj=150 C Tj=25 C o o Source-Drain Diode Forward 50 Normalized On Resistance 1.50 1.25 1.00 0.75 0.50 0.25 0.00 -50 -25 RON@Tj=25 C: 7.5m 0 25 50 75 100 125 150 o IS - Source Current (A) 1 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Tj - Junction Temperature (C) VSD - Source - Drain Voltage (V) Capacitance 3000 Frequency=1MHz 2500 10 VDS=10V 9 I = 12A D Gate Charge VGS - Gate-source Voltage (V) 25 8 7 6 5 4 3 2 1 0 0 5 10 15 20 25 30 35 40 C - Capacitance (pF) 2000 Ciss 1500 1000 Coss Crss 0 500 0 5 10 15 20 VDS - Drain - Source Voltage (V) QG - Gate Charge (nC) Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 6 www.anpec.com.tw APM4220KA Avalanche Test Circuit and Waveforms V DS L DUT IA S RG V DD tp V D SX(SU S) V DS V DD tp IL 0.0 1 tAV EA S Switching Time Test Circuit and Waveforms V DS RD DUT V RG V DD 10% tp V DS 90% GS V GS t d (on) t r t d (off) t f Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 7 www.anpec.com.tw APM4220KA Packaging Information SOP-8-P pin ( Reference JEDEC Registration MS-012) E1 D1 E H e1 D e2 A1 A 1 L 0.004m ax. Dim A A1 D D1* E E1* H L e1 e2 1 M illimet ers M in. 1.35 0.10 4.80 3.34 3.80 2.23 5.80 0.40 0.33 1.27BSC 8 M ax. 1.75 0.25 5.00 3.84 4.00 2.68 6.20 1.27 0.51 M in. 0.053 0.004 0.189 0.132 0.150 0.088 0.228 0.016 0.013 0.015X 45 Inches M ax. 0.069 0.010 0.197 0.151 0.157 0.106 0.244 0.050 0.020 0.50BSC 8 * Thermal pad dimension Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 8 www.anpec.com.tw APM4220KA Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition TP (IR/Convection or VPR Reflow) tp C ritical Zone T L to T P R am p-up T e m p e ra tu re TL T sm ax tL T sm in R am p-down ts Preheat 25 t 25 C to Peak T im e Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly 3C/second max. 100C 150C 60-120 seconds 183C 60-150 seconds See table 1 10-30 seconds Pb-Free Assembly 3C/second max. 150C 200C 60-180 seconds 217C 60-150 seconds See table 2 20-40 seconds 6C/second max. 6C/second max. 6 minutes max. 8 minutes max. Time 25C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 9 www.anpec.com.tw APM4220KA Classification Reflow Profiles(Cont.) Table 1. SnPb Entectic Process - Package Peak Reflow Tem peratures 3 3 Package Thickness Volum e m m Volum e m m <350 350 <2.5 m m 240 +0/-5C 225 +0/-5C 2.5 m m 225 +0/-5C 225 +0/-5C Table 2. Pb-free Process - Package Classification Reflow Tem peratures 3 3 3 Package Thickness Volum e mm Volum e mm Volum e mm <350 350-2000 >2000 <1.6 m m 260 +0C* 260 +0C* 260 +0C* 1.6 m m - 2.5 m m 260 +0C* 250 +0C* 245 +0C* 2.5 m m 250 +0C* 245 +0C* 245 +0C* *Tolerance: The device m anufacturer/supplier shall assure process com patibility up to and including the stated classification tem perature (this m eans Peak reflow tem perature +0C. For exam ple 260C+0C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245C,5 SEC 1000 Hrs Bias @ 125C 168 Hrs, 100% RH, 121C -65C ~ 150C, 200 Cycles Carrier Tape t P P1 D Po E F W Bo Ao Ko D1 Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 10 www.anpec.com.tw APM4220KA Carrier Tape(Cont.) T2 J C A B T1 Application A 330 1 B 62 +1.5 D C 12.75+ 0.15 D1 J 2 0.5 Po T1 12.4 0.2 P1 2.0 0.1 T2 2 0.2 Ao 6.4 0.1 W 12 0. 3 Bo 5.2 0. 1 P 8 0.1 Ko 2.1 0.1 E 1.750.1 t .30.013 SOP- 8-P F 5.5 1 1.55 +0.1 1.55+ 0.25 4.0 0.1 (mm) Cover Tape Dimensions Application SOP- 8-P Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 11 www.anpec.com.tw |
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